Datasheet4U Logo Datasheet4U.com

STF24N60M6 - N-CHANNEL POWER MOSFET

General Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS STF24N60M6 600 V.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 190 mΩ ID 17 A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF24NM60N N-Channel MOSFET INCHANGE
STF24NM65N N-Channel MOSFET INCHANGE
STF2454 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STF2454A Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STF2455 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STF24N60M2 N-channel Power MOSFET
STF24N60DM2 N-CHANNEL POWER MOSFET
STF24N65M2 N-channel MOSFET
STF24NF12 N-channel MOSFET
STF24NM60N N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF24N60M6 Datasheet N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™ M6 Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) S(3) NG1D2S3Z Product status link STF24N60M6 Product summary Order code STF24N60M6 Marking 24N60M6 Package TO-220FP Packing Tube Features Order code VDS STF24N60M6 600 V • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected RDS(on) max. 190 mΩ ID 17 A Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.