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STF260N4F7 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STF260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription for STF260N4F7 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STF260N4F7. For precise diagrams, and layout, please refer to the original PDF.

STF260N4F7 N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - preliminary data TO-220FP Figure 1: Internal schematic diagram ...

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heet - preliminary data TO-220FP Figure 1: Internal schematic diagram Features Order code STF260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

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