STF260N4F7 Datasheet | STMicroelectronics

Features Order code STF260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W - Among the lowest RDS(on) on the market - Excellent figure of merit (Fo M) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STF260N4F7 Table 1: Device summary Marking Package 260N4F7 TO-220FP Packaging Tube October 2015 Doc ID028478 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 .st. Contents Co...