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STF260N4F7
N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7
Power MOSFET in a TO-220FP package
Datasheet - preliminary data
TO-220FP Figure 1: Internal schematic diagram
Features
Order code STF260N4F7
VDS 40 V
RDS(on) max. 2.5 mΩ
ID 35 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.