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STF33N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Order codes STB33N65M2 STF33N65M2 STP33N65M2 STI33N65M2 VDS RDS(on) max ID 650 V 0.14 Ω 24 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram , TAB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data 7$%  '3$. 7$% 7$%  72)3   7$% 72    ,3$. Features Order codes STB33N65M2 STF33N65M2 STP33N65M2 STI33N65M2 VDS RDS(on) max ID 650 V 0.14 Ω 24 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.