Datasheet4U Logo Datasheet4U.com

STF3LN80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STF3LN80K5 VDS 800 V RDS(on) max 3.25 Ω ID 2A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF30N10F7 N-Channel MOSFET INCHANGE
STF30N65M5 N-Channel MOSFET INCHANGE
STF31N65M5 N-Channel MOSFET INCHANGE
STF32N65M5 N-Channel MOSFET INCHANGE
STF32NM50N N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STF3LN62K3 N-channel Power MOSFET
STF30N10F7 N-CHANNEL POWER MOSFET
STF30N65M5 N-CHANNEL POWER MOSFET
STF30NM50N Power MOSFET
STF30NM60N N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
STF3LN80K5 N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF3LN80K5 VDS 800 V RDS(on) max 3.25 Ω ID 2A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Published: |