STF3LN80K5 Datasheet | STMicroelectronics

N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a TO-220FP package - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF3LN80K5 VDS 800 V RDS(on) max 3.25 Ω ID 2A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STF3LN80K5 AM15572v1_no_tab Table 1: Device summary Marking Package 3LN80K5 TO-220FP Packing Tube July 2016 Doc ID027715 Rev...