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STF3N80K5
Datasheet
N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh K5 Power MOSFET in a TO-220FP package
Features
3 2 1 TO-220FP D(2)
Order code
VDS
STF3N80K5
800 V
•
Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
RDS(on) max. 3.5 Ω
ID 2.5 A
Applications
G(1)
• Switching applications
Description
S(3)
AM15572v1_no_tab This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.