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STF40N20 - Low gate charge STripFET Power MOSFET

General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.

Key Features

  • Type STB40N20 STP40N20 STP40N20FP STW40N20.
  • VDSS 200V 200V 200V 200V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET General features Type STB40N20 STP40N20 STP40N20FP STW40N20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V 200V RDS(on) <0.045Ω <0.045Ω <0.045Ω <0.045Ω ID 40A 40A 40A 40A PW 160W 160W 160W 40W TO-220 1 2 3 3 1 D2PAK Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Excellent figure of merit (RDS*Qg) 100% avalanche tested 1 2 3 TO-220FP Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.