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STF40N60M2 - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • 3 2 1 TO-220FP 12 3 I2PAKFP (TO-281)  TO-3PF    Order codes STF40N60M2 STFI40N60M2 STFW40N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.088 Ω 34 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features 3 2 1 TO-220FP 12 3 I2PAKFP (TO-281)  TO-3PF    Order codes STF40N60M2 STFI40N60M2 STFW40N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.088 Ω 34 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Figure 1. Internal schematic diagram '  *  Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.