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STF6NK50Z - N-channel Power MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP6NK50Z.

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Datasheet Details

Part number STF6NK50Z
Manufacturer STMicroelectronics
File Size 434.12 KB
Description N-channel Power MOSFET
Datasheet download datasheet STF6NK50Z Datasheet
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Full PDF Text Transcription

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STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE STP6NK50Z STF6NK50Z STD6NK50Z s VDSS 500 V 500 V 500 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 5.6 A 5.6 A 5.6 A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 0.93 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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