Datasheet Summary
STF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK
- production data
Features
Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3
ID 5.4 A
Ptot 30 W 110 W
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely...