Description
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Features
- 3 2 1
TO-220FP narrow leads Figure 1. Internal schematic diagram
AM15572v1
Order code
VDS
RDS(on) max
STF6N65K3(045Y) 650 V 1.3 Ω
ID 5.4 A
PTOT 30 W.
- 100% avalanche tested.
- Extremely high dv/dt capability.
- Gate charge minimized.
- Very low intrinsic capacitance.
- Improved diode reverse recovery
characteristics.
- Zener-protected.