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STF6N80K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STF6N80K5 STFI6N80K5 VDS RDS(on)max ID 800 V 1.6 Ω 4.5 A PTOT 25 W.
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I 2 PAKFP Figure 1. Internal schematic diagram D(2) Features Order code STF6N80K5 STFI6N80K5 VDS RDS(on)max ID 800 V 1.6 Ω 4.5 A PTOT 25 W • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.