STF8N60DM2 - N-channel Power MOSFET

STMicroelectronics

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

Order code VDS RDS(on) max. ID PTOT STF8N60DM2 600 V 600 mΩ 8 A 25 W.
Fast-recovery body diode.
Extremely low gate charge and input capacitance.
Low on-resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.
Zener-protected.

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STF8N60DM2 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STF8N60DM2
Manufacturer	STMicroelectronics
File Size	573.07 KB
Description	N-channel Power MOSFET
Datasheet	STF8N60DM2 Datasheet

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STF8N60DM2 N-channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code VDS RDS(on) max. ID PTOT STF8N60DM2 600 V 600 mΩ 8 A 25 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.