STF8N60DM2 Datasheet | STMicroelectronics

N-channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code RDS(on) max. ID PTOT STF8N60DM2 600 V 600 mΩ 8 A 25 W - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) Order code STF8N60DM2 AM15572v1_no_tab Table 1: Device summary Marking Package 8N60DM2 TO-220FP Packing Tube November...