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STF8N80K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order codes STF8N80K5 STFI8N80K5 VDS RDS(on)max. 800 V 0.95 Ω ID 6A PTOT 25 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram D(2) G(1).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data 3 2 1 TO-220FP 1 2 3 I2PAKFP (TO-281) Features Order codes STF8N80K5 STFI8N80K5 VDS RDS(on)max. 800 V 0.95 Ω ID 6A PTOT 25 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram D(2) G(1) Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.