STF8N80K5 Datasheet | STMicroelectronics

STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages - production data 3 2 1 TO-220FP 1 2 3 I2PAKFP (TO-281) Features Order codes STF8N80K5 STFI8N80K5 VDS RDS(on)max. 800 V 0.95 Ω ID 6A PTOT 25 W - Industry’s lowest RDS(on) x area - Industry’s best figure of merit (Fo M) - Ultra low gate charge - 100% avalanche tested - Zener-protected Figure 1. Internal schematic diagram D(2) G(1) Applications - Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Order codes STF8N80K5 STFI8N80K5 Table 1. Device summary Marking Package...