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STF9N60M2 - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram.

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Full PDF Text Transcription for STF9N60M2 (Reference)

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STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data 3 2 1 TO-220FP...

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-220FP and I2PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Features Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

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