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STF9NK60ZD - N-channel Power MOSFET

Datasheet Summary

Description

The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode.

Such series complements the “FDmesh™” Advanced Technology.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP9NK60ZD.

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Datasheet Details

Part number STF9NK60ZD
Manufacturer STMicroelectronics
File Size 846.56 KB
Description N-channel Power MOSFET
Datasheet download datasheet STF9NK60ZD Datasheet
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Full PDF Text Transcription

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STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK SuperFREDMesh™ MOSFET ADVANCED DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD s VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 125 W 30 W 125 W 3 1 2 TYPICAL RDS(on) = 0.85 Ω s VERY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s LOW INTRINSIC CAPACITANCES s FAST INTERNAL RECOVERY DIODE TO-220 TO-220FP 3 1 DESCRIPTION The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology.
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