STFH10N60M2
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.
Key Features
- Order code STFH10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
