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STFH10N60M6 - N-channel Power MOSFET

General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS @ TJmax RDS(on) max. STFH10N60M6 650 V 600 mΩ.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected ID 6.4 A G(1) S(3) AM15572v1_no_tab Product status link STFH10N60M6.

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Full PDF Text Transcription for STFH10N60M6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFH10N60M6. For precise diagrams, and layout, please refer to the original PDF.

STFH10N60M6 Datasheet N-channel 600 V, 520 mΩ typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide creepage package TO-220 FP wide creepage D(2) Features Order code VDS ...

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creepage package TO-220 FP wide creepage D(2) Features Order code VDS @ TJmax RDS(on) max. STFH10N60M6 650 V 600 mΩ • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 6.4 A G(1) S(3) AM15572v1_no_tab Product status link STFH10N60M6 Applications • Switching applications • LLC converters, resonant converters • Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

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