STFI260N6F6 Key Features
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
- Switching
- Part: STFI260N6F6
- Manufacturer: STMicroelectronics (official site)
- Size: 290.94 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STFI26N60M2 | N-channel Power MOSFET |
| STFI26NM60N | N-channel Power MOSFET |
| STFI20N65M5 | N-channel Power MOSFET |
| STFI20NK50Z | N-channel Power MOSFET |
| STFI20NM65N | N-channel Power MOSFET |
STFI260N6F6 Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 3 I²PAKFP (TO-281) Figure.