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STFI26NM60N - N-channel Power MOSFET

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General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Overview

STFI26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in an I²PAKFP package Datasheet - production data 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic.

Key Features

  • Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A.
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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