STFI26NM60N Datasheet | STMicroelectronics

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in an I²PAKFP package - production data 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1) S(3) Features Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A - Fully insulated and low profile package with increased creepage path from pin to heatsink plate - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s...