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STFW1N105K3 - N-channel Power MOSFET

Download the STFW1N105K3 datasheet PDF. This datasheet also covers the STF1N105K3 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W.
  • Gate charge minimized.
  • Extremely large avalanche performance.
  • 100% avalanche tested.
  • Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF1N105K3-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W ■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested ■ Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220 Applications ■ Switching applications Figure 1. Internal schematic diagram Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.