Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
Features
- 3 2 1
TO-220FP
123
I2PAKFP (TO-281)
1
3 2 1
TO-3PF
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Order codes VDS @ TJmax RDS(on) max ID
STF24N60M2 STFI24N60M2
650 V
0.19 Ω 18 A
STFW24N60M2.
- Extremely low gate charge.
- Lower RDS(on) x area vs previous generation.
- Low gate input resistance.
- 100% avalanche tested.
- Zener-protected.