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STFW42N60M2-EP - N-channel Power MOSFET

Download the STFW42N60M2-EP datasheet PDF. This datasheet also covers the STF42N60M2-EP variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.

Key Features

  • Order codes VDS @ TJmax RDS(on) max ID STF42N60M2-EP 650 V 0.087 Ω 34 A  STFW42N60M2-EP 3 2 1 TO-220FP TO-3PF    Figure 1. Internal schematic diagram '  .
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF42N60M2-EP-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF42N60M2-EP, STFW42N60M2-EP N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in TO-220FP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS(on) max ID STF42N60M2-EP 650 V 0.087 Ω 34 A  STFW42N60M2-EP 3 2 1 TO-220FP TO-3PF    Figure 1. Internal schematic diagram '  • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) *  6  AM01476v1 Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.