Description
duThe devices are N-channel MDmesh™ V Power roMOSFET based on an innovative proprietary Pvertical process technology, which is combined tewith STMicroelectronics’ well-known lePowerMESH™ horizontal layout structure.
Features
- Order codes STFW60N65M5
t(s)STW60N65M5
VDSS @ TJmax
710 V
RDS(on) max
< 0.059 Ω
ID 46 A
c.
- Worldwide best RDS(on).
- area amongst the usilicon based devices rod.
- Higher VDSS rating P.
- High dv/dt capability te.
- Excellent switching performance le.
- Easy to drive so.
- 100% avalanche tested
Ob.
STFW60N65M5 Datasheet
