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STG3P3M25N60
3 Phase inverter IGBT - SEMITOP®3 module
PRELIMINARY DATA
General features
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Type
VCES 600V
VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 25A
STG3P3M25N60
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N-channel very fast PowerMESH™ IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution One screw mounting Compact design Semitop®3 is a trademark of Semikron
SEMITOP®3
Internal schematic diagram
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances.