Datasheet Summary
Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
Product status link STGAP2GS
Product label
Features
- High voltage rail up to 1200 V
- Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
- dV/dt transient immunity ±100 V/ns
- Input-output propagation delay: 45 ns
- Separate sink and source option for easy gate driving configuration
- UVLO function optimized for GaN
- Gate driving voltage up to 15 V
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection
- Standby function
- Wide body SO-8W package
Application
- Motor driver for home appliances, factory automation, industrial drives and fans.
- 600/1200 V...