STMicroelectronics STGB10NC60KD
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.FEATURES
● Lower on voltage drop (VCE(sat))● Lower CRES / CIES ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery antiparallel diode
● Short-circuit withstand time 10µs
DESCRIPTION
APPLICATIONS
● High frequency motor controls● SMPS and PFC in both hard switch and resonant topologies
● Motor drives TAB 3 1 D2PAK TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NC60KDT4 GB10NC60KD STGD10NC60KDT4 GD10NC60KD STGF10NC60KD GF10NC60KD STGP10NC60KD GP10NC60KD Packages D2PAK DPAK TO-220FP TO-220 November 2009 Doc ID 11423 Rev 6 Packaging Tape and reel Tube 1/20 20 Contents Contents STGx10NC60KD 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .