STGB18N40LZ Datasheet PDF (EAS 180 mJ - 400 V - internally clamped IGBT)

STGB18N40LZ - EAS 180 mJ - 400 V - internally clamped IGBT

Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

Features

AEC Q101 compliant.
180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH.
ESD gate-emitter protection.
Gate-collector high voltage clamping.
Logic level gate drive.
Low saturation voltage.
High pulsed current capability.
Gate and gate-emitter resistor.

Datasheet Details

Part number	STGB18N40LZ
Manufacturer	STMicroelectronics
File Size	629.59 KB
Description	EAS 180 mJ - 400 V - internally clamped IGBT
Datasheet	STGB18N40LZ Datasheet
Additional preview pages of the STGB18N40LZ datasheet.

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Full PDF Text Transcription

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STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor Application ■ Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. IPAK 3 2 1 3 1 DPAK 123 I²PAK 3 2 1 TO-220 3 1 D²PAK Figure 1.

Published: Jan 4, 2009 |