STGB18N40LZ
STGB18N40LZ is EAS 180 mJ - 400 V - internally clamped IGBT manufactured by STMicroelectronics.
STGB18N40LZ STGD18N40LZ, STGP18N40LZ
EAS 180 m J
- 390 V
- internally clamped IGBT
Features
- AEC Q101 pliant
- 180 m J of avalanche energy @ TC = 150 °C,
L = 3 m H
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Application
- Pencil coil electronic ignition driver
Description
This application-specific IGBT utilizes the most advanced Power MESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
IPAK
2 1
3 1
DPAK
I²PAK
3 2 1
TO-220
3 1
D²PAK
Figure 1. Internal schematic diagram
C (2 or TAB)
G...
