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STGB18N40LZ - EAS 180 mJ - 400 V - internally clamped IGBT

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STMicroelectronics

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STGB18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGB18N40LZ

Datasheet Details

Part number	STGB18N40LZ
Manufacturer	STMicroelectronics
File Size	629.59 KB
Description	EAS 180 mJ - 400 V - internally clamped IGBT
Datasheet	STGB18N40LZ Datasheet
Additional preview pages of the STGB18N40LZ datasheet.

Product details

Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

Features

AEC Q101 compliant.
180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH.
ESD gate-emitter protection.
Gate-collector high voltage clamping.
Logic level gate drive.
Low saturation voltage.
High pulsed current capability.
Gate and gate-emitter resistor.

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Published: Jan 4, 2009 |