STGB18N40LZ Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
STGB18N40LZ Key Features
- AEC Q101 pliant
- 180 mJ of avalanche energy @ TC = 150 °C
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
- Pencil coil electronic ignition driver
- 3 2 Electrical characteristics