STGB50H65FB2
STGB50H65FB2 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
TAB 2 3 1
D²PAK
Features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
C(2, TAB) G(1)
Applications
- Welding
- Power factor correction
- UPS
- Solar inverters
- Chargers
Description
E(3)
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is
G1C2TE3 optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Product status link STGB50H65FB2
Product summary
Order code
Marking
G50H65FB2
Package
D2PAK
Packing
Tape and...
