STGB50H65FB2 Description
E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is G1C2TE3 optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
STGB50H65FB2 Key Features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient