DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. <40KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
MOTOR CONTROLS s SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature 80 0.64 – 55 to 150 150 600 ±20 14 7 56 70 0.56 Value DPAK V V A A A W W/°C °C °C Unit ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA June 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/8 STGP7NB60F - STGD7NB60F TH...
STMicroelectronics
