STMicroelectronics STGD7NB60H
The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.STGD7NB60H Specifications
- Package : TO-252-3
- Max Collector Current : 14A
- Terminals : 2
- Collector Emitter Voltage : 600V
- Collector Emitter Saturation Voltage : 2.3V
- Max Power Dissipation : 55W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | STGD7NB60H |
|---|---|
| Datasheet | STGD7NB60H Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL IGBT |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM (s) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 14 7 56 55 0.44 –65 to 150 150 Unit V V V A A A W W/°C °C °C July 2000 1/9 STGD7NB60H THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 2.27 100 1.5 °C/W °C/W °C/W EL...
