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STGIPQ8C60T-HZ - short-circuit rugged IGBT

Features

  • IPM 8 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes.
  • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/ pull-up resistors.
  • Internal bootstrap diode.
  • Optimized for low electromagnetic interference.
  • Undervoltage lockout.
  • Short-circuit rugged TFS IGBTs.
  • Shutdown function.
  • Interlocking function.
  • Op-amp for advanced current sensing.

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Datasheet preview – STGIPQ8C60T-HZ

Datasheet Details

Part number STGIPQ8C60T-HZ
Manufacturer STMicroelectronics
File Size 1.23 MB
Description short-circuit rugged IGBT
Datasheet download datasheet STGIPQ8C60T-HZ Datasheet
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Full PDF Text Transcription

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STGIPQ8C60T-HZ Datasheet SLLIMM™ nano - 2nd series IPM, 3-phase inverter, 8 A, 600 V, short‑circuit rugged IGBTs Product status link STGIPQ8C60T-HZ Product summary Order code STGIPQ8C60T-HZ Marking GIPQ8C60T-HZ Package N2DIP-26L type Z Packing Tube Features • IPM 8 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/ pull-up resistors • Internal bootstrap diode • Optimized for low electromagnetic interference • Undervoltage lockout • Short-circuit rugged TFS IGBTs • Shutdown function • Interlocking function • Op-amp for advanced current sensing • Comparator for fault protection against overcurrent • Isolation ratings of 1500 Vrms/min.
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