Datasheet Summary
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Trench gate field-stop 650 V, 20 A high speed HB series IGBT
1 TO-3PF
3 2 1
3 2 1
TO-247
3 2 1
TO-3P
C(2, TAB)
G(1)
E(3)
G1C2TE3
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
Applications
- Photovoltaic inverters
- Power factor correction
- Welding
- High-frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an...