STMicroelectronics STGW20H60DF
This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. This device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.| Part No. | STGW20H60DF |
|---|---|
| Datasheet | STGW20H60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 20A high speed IGBT |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-247 C(2, TAB)● Maximum junction temperature: TJ = 175 °C
● High speed switching
● Tight parameter distribution
● Safe paralleling
● Low thermal resistance
● Short-circuit rated
● Soft and fast recovery antiparallel diode
APPLICATIONS
● Industrial motor control G(1)● PFC converters, single phase input
● Uninterruptable power supplies (UPS) E(3) NG1E3C2T
DESCRIPTION
Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW20H60DF Product summary Order code STGW20H60DF Marking GW20H60DF Package TO-247 Packing Tube DS9721 - Rev 2 - June 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitt...
