Datasheet4U Logo Datasheet4U.com

STGW20H60DF - 600V 20A high speed trench gate field-stop IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.
  • Ultrafast soft recovery antiparallel diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGW20NB60H N-CHANNEL IGBT ST Microelectronics
STGW20NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60K N-CHANNEL IGBT ST Microelectronics
STGW20NB60KD N-CHANNEL IGBT ST Microelectronics
STGW12NB60H N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGW20H65FB IGBT
STGW20NC60V very fast IGBT
STGW20NC60VD very fast IGBT
STGW20V60DF 600V 20A very high speed trench gate field-stop IGBT
STGW20V60F IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1. Internal schematic diagram C (2, TAB) G (1) STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.