Datasheet Summary
3 2 1
TO-247
TO-3P
3 2 1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
STGW20H60DF, STGWT20H60DF
600 V, 20 A high speed trench gate field-stop IGBT
- production data
Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
Applications
- Motor control
- UPS, PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum promise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive...