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STGW20V60F Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3).

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.

STGW20V60F Distributor