• Part: STGW20V60DF
  • Description: 600V 20A very high speed trench gate field-stop IGBT
  • Manufacturer: STMicroelectronics
  • Size: 2.07 MB
Download STGW20V60DF Datasheet PDF
STMicroelectronics
STGW20V60DF
STGW20V60DF is 600V 20A very high speed trench gate field-stop IGBT manufactured by STMicroelectronics.
- Part of the STGB20V60DF comparator family.
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT - production data Features - Maximum junction temperature: TJ = 175 °C - Very high speed switching series 3 2 1 1 - Tail-less switching off - Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A - Tight parameters distribution - Safe paralleling - Low thermal resistance TO-220 D²PAK 3 2 1 1 2 - Very fast soft recovery antiparallel diode - Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code STGB20V60DF STGP20V60DF STGW20V60DF STGWT20V60DF June 2013 This is information on a product in full...