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STGW20NC60VD - very fast IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “V” identifies a family optimized for high frequency applications.

Key Features

  • TYPE STGW20NC60VD s s Figure 1: Package IC @100°C 30 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s s OFF LOSSES.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE STGW20NC60VD s s Figure 1: Package IC @100°C 30 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s s OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE LOWER CRES /CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION 3 2 1 TO-247 Weight: 4.41gr ± 0.01 Max Clip Pressure: 150 N/mm2 Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.