DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS s U.P.S. s WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj May 2003 Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ±20 40 20 80 10 150 1 –65 to 150 150 Unit V V V A A A µs W W/°C °C °C 1/8 STGW20NB60K THERMAL DATA Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 0.83 62.5 0.5 °C/W °C/W...
STMicroelectronics
