DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS s U.P.S. s WELDING EQUIPMENTS ORDERING INFORMATION SALES TYPE STGW20NB60KD MARKING GW20NB60KD PACKAGE TO-247 PACKAGING TUBE August 2003 1/8 STGW20NB60KD ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 40 20 80 10 150 1.2 – 55 to 150 Unit V V V A A A µs W W/°C °C THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resi...
STMicroelectronics
