STGW25H120DF2 - Trench gate field-stop IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW25H120DF2
Manufacturer	STMicroelectronics
File Size	911.18 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW25H120DF2 Datasheet
Additional preview pages of the STGW25H120DF2 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
5 μs minimum short circuit withstand time at TJ = 150 °C.
Safe paralleling.
Low thermal resistance.
Very fast recovery antiparallel diode.

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Published: Apr 3, 2020 |