STGW25H120DF2 Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling...
STGW25H120DF2 Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 25 A
- 5 μs minimum short circuit withstand time at TJ = 150 °C
- Safe paralleling
- Low thermal resistance
- Very fast recovery antiparallel diode