STMicroelectronics STGW25H120DF2
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.| Part No. | STGW25H120DF2 |
|---|---|
| Datasheet | STGW25H120DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 25A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● VCE(sat) = 2.1 V (typ.) @ IC = 25 A
● 5 μs minimum short circuit withstand time at TJ = 150 °C
● Safe paralleling
● Low thermal resistance
● Very fast recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● High frequency converters
DESCRIPTION
Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product summary Order code STGW25H120DF2 Marking G25H120DF2 Package TO-247 Packing Tube Order code STGWA25H120DF2 Marking G25H120DF2 Package TO-247 long leads Packing Tube DS9297 - Rev 6 - January 2025 For further information, contact your local STMicroelectronics sales office. STGW25H120DF2, STGWA25H120DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter...
