STGW25H120F2 Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling...
STGW25H120F2 Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 25 A
- 5 µs minimum short circuit withstand time at
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance