STGW25H120F2 - Trench gate field-stop IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW25H120F2
Manufacturer	STMicroelectronics
File Size	601.16 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW25H120F2 Datasheet
Additional preview pages of the STGW25H120F2 datasheet.

Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
5 µs minimum short circuit withstand time at TJ=150 °C.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3).

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Published: May 28, 2016 |