Datasheet Summary
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
- production data
TO-3P
3 2 1
Figure 1: Internal schematic diagram
Features
- Maximum junction temperature: TJ = 175 °C
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Co-packed diode for protection
- Safe paralleling
- Low thermal resistance
Applications
- Power factor corrector (PFC)
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of...