STGWT80V60DF Datasheet | STMicroelectronics

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed - production data 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Features - Maximum junction temperature: TJ = 175 °C - Tail-less switching off - VCE(sat) = 1.85 V (typ.) @ IC = 80 A - Tight parameters distribution - Safe paralleling - Low thermal resistance - Very fast soft recovery antiparallel diode Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGW80V60DF STGWT80V60DF Table 1. Device summary Marking Package...