STMicroelectronics STH10NA50
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.| Part No. | STH10NA50 |
|---|---|
| Datasheet | STH10NA50 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOS MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s 3 2 3 2 TO-218 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STW/STH10NA50 VD S V DG R V GS ID ID ID M(●) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH10NA50FI V V V 5.6 3.5 38 60 0.48 4000 A A A W W/o C V o o 500 500 ± 30 9.6 6.1 38 150 1.2 -65 to 150 150 C C (●) Pulse width limited by safe operating area November 1996 1/11 STH10NA50/FI STW10NA50 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance...
