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STH12N120K5-2AG - Automotive-grade N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS RDS(on) max. ID STH12N120K5-2AG 1200 V 1.9 Ω 7A.
  • AEC-Q101 qualified.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested G(1) S(2, 3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STH12N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package TAB 23 1 H2PAK-2 D(TAB) Features Order code VDS RDS(on) max. ID STH12N120K5-2AG 1200 V 1.9 Ω 7A • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested G(1) S(2, 3) Applications • Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.