Datasheet Summary
Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package
23 1 H2PAK-2
D(TAB)
Features
Order code
RDS(on) max.
1200 V
1.9 Ω
7A
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
G(1) S(2, 3)
Applications
- Switching applications
DTG1S23NZ
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring...