STH110N10F7-2 Overview
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH110N10F7-2 STH110N10F7-6 110N10F7 H2PAK-2 H2PAK-6 Tape and reel November 2014 DocID024027 Rev 4 This is information on a product in.
Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
