STH110N10F7-2 - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STH110N10F7-2
Manufacturer	STMicroelectronics
File Size	694.21 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STH110N10F7-2 Datasheet
Additional preview pages of the STH110N10F7-2 datasheet.

Product details

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 22, 2019 |