Datasheet Summary
STH110N10F7-2, STH110N10F7-6
N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
- production data
TAB TAB
2 3
H2PAK-2
1 H2PAK-6
Figure 1: Internal schematic diagram
S(2,3,4,5,6,7)
Features
Order code
STH110N10F7-2 STH110N10F7-6
VDS 100 V
RDS(on) max.
6.5 mΩ
ID PTOT 110 A 150 W
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also...
