STH110N10F7-2 Datasheet and Specifications PDF

The STH110N10F7-2 is a N-CHANNEL POWER MOSFET.

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Part NumberSTH110N10F7-2 Datasheet
ManufacturerSTMicroelectronics
Overview These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for. Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications
* Switching applications Description These N-chan.
Part NumberSTH110N10F7-2 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu.
*Drain Current
*ID= 110A@ TC=25℃
*Drain Source Voltage- : VDSS= 100V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Low Drain-Source On-Resistance APPLICATIONS
*S.