Part STH110N10F7-2
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 264.53 KB
Inchange Semiconductor

STH110N10F7-2 Overview

Description

Low Drain-Source On-Resistance.

Key Features

  • Drain Current –ID= 110A@ TC=25℃
  • Drain Source Voltage- : VDSS= 100V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation