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STH110N10F7-6 - N-CHANNEL POWER MOSFET

Download the STH110N10F7-6 datasheet PDF. This datasheet also covers the STH110N10F7-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH110N10F7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STH110N10F7-2 N-CHANNEL POWER MOSFET
STH110N7F6-2 N-CHANNEL POWER MOSFET
STH10N80K5-2AG Automotive-grade N-channel Power MOSFET
STH10NK60ZFI N-CHANNEL Power MOSFET
STH12N120K5-2 N-channel 1200V 12A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data TAB TAB 2 3 1 H2PAK-2 7 1 H2PAK-6 Figure 1: Internal schematic diagram S(2,3,4,5,6,7) Features Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.