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STH110N10F7-6

Manufacturer: STMicroelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

STH110N10F7-6 datasheet preview

Datasheet Details

Part number STH110N10F7-6
Datasheet STH110N10F7-6 STH110N10F7-2 Datasheet (PDF)
File Size 694.21 KB
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
STH110N10F7-6 page 2 STH110N10F7-6 page 3

STH110N10F7-6 Overview

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

STH110N10F7-6 Key Features

  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
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