STH15810-2
STH15810-2 is N-channel Power MOSFET manufactured by STMicroelectronics.
N-channel 100 V, 0.0034 Ω typ., 110 A, STrip FET™ F7 Power MOSFET in a H²PAK-2 package
- production data
Figure 1: Internal schematic diagram
Features
Order code VDS STH15810-2 100 V
RDS(on)max 0.0039 Ω
ID 110 A
PTOT 250 W
- 100% avalanche tested
- Ultra low on-resistance
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STH15810-2
Table 1: Device summary
Marking
Package
H²PAK-2
Packaging Tape and reel
January 2017
Doc ID025819 Rev 3
This is information on a product in full production.
1/15
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Contents
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics .....................
