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STH15810-2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STH15810-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1: Internal schematic.

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STH15810-2 Table 1: Device summary Marking Package 15810 H²PAK-2 Packaging Tape and reel January 2017 DocID025819 Rev 3 This is information on a product in full production.

1/15 www.st.com Contents Contents STH15810-2 1 Electrical ratings .............................................................................

Key Features

  • Order code VDS STH15810-2 100 V RDS(on)max 0.0039 Ω ID 110 A PTOT 250 W.
  • 100% avalanche tested.
  • Ultra low on-resistance.

STH15810-2 Distributor