STH15810-2 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH15810-2 Table 1: Device summary Marking Package 15810 H²PAK-2 Packaging Tape and reel January 2017 DocID025819 Rev 3 This is information on a product in full...
STH15810-2 Key Features
- 100% avalanche tested
- Ultra low on-resistance