Datasheet Details
| Part number | STH175N4F6-2AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 564.96 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STH175N4F6-2AG Datasheet
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General Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Table 1.
Key Features
- TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A.
- Designed for automotive.